ON Semiconductor has launched two new Power Integrated Modules for its 2018 electronic demonstration along with an Intelligent Power Module for EV charging.
Aimed at applications such as solar power inverters, UPS inverter stages and industrial variable frequency units, the integrated power modules (PIM) NXH160T120L2Q1SG and NXH160T120L2Q2F2SG will be presented at Electronic 2018 on November 13 in Munich.
The devices are designed to relieve designers of the need to work with discrete IGBT or MOSFETS. The objective is faster marketing time, greater reliability, lower cost and significant savings in real estate.
Both modules come in a type of module in a growing series, currently with packages Q0, Q1 and Q2.
The modules Q0, Q1 and Q2PACK. ON Semiconductor screenshot
The NXH160T120L2Q1SG and NXH160T120L2Q2F2SG devices use the Q1PACK and Q2PACK respectively and are intended for inverters in the range of 30 kW to 50 kW.
They incorporate IGBT of field stop ditch and fast recovery diodes, resulting in less conduction and switching losses. Designers are enabled to exchange between low VCE (SAT) and low EEN / EAPAGADO Losses as required by the situation. The high current operation with minimal effects of parsite inductance is possible thanks to the direct bond copper substrate of the units, which allows high switching speeds. The insulation is specified at 3000 VRMS, and the leak is a solid 12.7 mm.
Both devices incorporate three-level inverters with split neutral point clamp constructed from two 160GB / 1200V half-bridge IGBT with reverse diodes and both include a negative temperature coefficient thermistor. Each device also includes a second set of two neutral point IGBTs.
The differences (slight) are in the details
NXH160T120L2Q1SG
1200V IGBT Specifications:
- VCE (SAT) = 2.1V @ 160A
- Switching Power Loss (ESW) = 6.3mJ @ 100A
650V / 100A IGBT Specifications:
- VCE (SAT) = 1.65V @ 150A
- Switching power loss ESW = 3.8mJ @ 100A
The device also includes:
- Two neutral point rectifiers 100A / 1200V
- Two 100A / 650V half bridge rectifiers
The NXH160T120L2Q1SG is also available as NXH160T120L2Q1PG, with the difference that the former uses welding pins and the latter uses pressure adjustment pins.
NXH160T120L2Q1SG and NXH160T120L2Q1PG packages. Image (modified) of ON Semiconductor
Watch the General product description NXH160T120L2Q1SG for full specifications.
The NXH160T120L2Q2F2SG
1200V IGBT Specifications:
- VCE (SAT) = 2.15V
- Switching Power Loss (ESW) = 4.3mJ
600V / 100A IGBT Specifications:
- VCE (SAT) = 1.47V
- ESW switching power loss = 2.56mJ
The device also includes:
- Two neutral point rectifiers 120A / 1200V
- Two 60A / 600V half bridge rectifiers
Screenshot of the Q2PACK (modified) module of ON Semiconductor
Watch the NXH160T120L2Q2F2SG product overview for full specifications.
Many different ways of approaching power
Although, in this case, ON Semiconductor makes it unnecessary for designers to use discrete IGBT, the company also sells such parts to designers who want to "do it alone." And, since there are many kinds of products, each one has its unique set of energy specifications and needs, no energy module can meet every need.
Therefore, there is plenty of space for multiple suppliers to satisfy each niche in the "energy ecology." ON Semiconductor even provides such discrete to other power module manufacturers, such as AC propulsion to incorporate in their own devices, which are intended for electric vehicles.
In fact, ON Semiconductor addresses other areas of electric power for electric vehicles and plug-in hybrids with its FAM65xxx series of intelligent power modules.
Small footprints, light weights for electric vehicle charging
The charge of the electric vehicle on board is another hot spot within the "ecology of power." Therefore, ON Semiconductor also introduce the FAM65xxx series of Intelligent Power Modules in electronics.
The scheme of a device covers the H-bridge, PFC and bridge rectifier configurations to address the applications at each stage of loading and DC-DC on board. In addition to saving table space, members of this family will try to add much less to the total weight of the vehicle than discrete individual components.
FAM65xxx. ON Semiconductor Image
ON Semiconductor also says that its power modules for onboard loading can save 50% of the board space compared to discrete components.
EMI, which is always a critical concern in vehicles, is reduced due to a directly bonded internal copper structure that alleviates the need for insulating sheets that are often necessary when designed with discrete elements.
AM65xxx members comply with the AECQ 101 and AQG324 automotive standards.
What power modules have caught your attention this year? What trends interest you before the 2018 electronics? Let us know in the comments below.